Electron Traps in Gd3Ga3Al2O12:Ce Garnets Doped with Rare-Earth Ions

被引：9

作者：

Khanin, V. M. ^{[1
,2
]}

Rodnyi, P. A. ^{[1
]}

Wieczorek, H. ^{[2
]}

Ronda, C. R. ^{[2
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[2] Philips Res Eindhoven, High Tech Campus 34, NL-5656 AE Eindhoven, Netherlands

来源：

TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 05期

关键词：

SINGLE-CRYSTAL SCINTILLATORS; ENERGIES; LOCATION;

D O I：

10.1134/S1063785017050042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The curves of thermally stimulated luminescence of Gd3Ga3Al2O12:Ce3+ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80-550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd3Ga3Al2O12 is presented.

引用

页码：439 / 442

页数：4

共 19 条

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