Electron Traps in Gd3Ga3Al2O12:Ce Garnets Doped with Rare-Earth Ions

被引：9
作者：
Khanin, V. M. [1 ,2 ]
Rodnyi, P. A. [1 ]
Wieczorek, H. [2 ]
Ronda, C. R. [2 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[2] Philips Res Eindhoven, High Tech Campus 34, NL-5656 AE Eindhoven, Netherlands
来源：
TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 05期
关键词：
SINGLE-CRYSTAL SCINTILLATORS; ENERGIES; LOCATION;
D O I：
10.1134/S1063785017050042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The curves of thermally stimulated luminescence of Gd3Ga3Al2O12:Ce3+ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80-550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd3Ga3Al2O12 is presented.
引用
收藏
页码：439 / 442
页数：4
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