Growth of ⟨111⟩-oriented Cu layer on thin TaWN films

被引：4

作者：

Takeyama, Mayumi B. ^{[1
]}

Sato, Masaru ^{[1
]}

机构：

[1] Kitami Inst Technol, Fac Engn, Sch Earth Energy & Environm Engn, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 07期

基金：

日本学术振兴会;

关键词：

DIFFUSION-BARRIER PROPERTIES; INTERFACIAL ENERGY; AMORPHOUS (MO; ORIENTATION; ELECTROMIGRATION; BCC; NB; AL;

D O I：

10.7567/JJAP.56.07KC03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we examine the growth of a < 111 >-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5nm)/Si system. Also, this system tolerates annealing at 700 degrees C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

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