Rectangular Nanotubes of Copper Phthalocyanine: Application to a Single Nanotube Transistor

被引：41

作者：

Jung, Jin S. ^{[1
]}

Lee, Jin W. ^{[1
]}

Kim, Kihyun ^{[1
]}

Cho, Mi Y. ^{[1
]}

Jo, Seong G. ^{[1
]}

Joo, Jinsoo ^{[1
]}

机构：

[1] Korea Univ, Dept Phys, Seoul 136713, South Korea

来源：

CHEMISTRY OF MATERIALS | 2010年 / 22卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; THIN-FILM; MOBILITY; NANOMATERIALS; PERFORMANCE; FABRICATION; PORPHYRINS; COBALT; ALPHA;

D O I：

10.1021/cm903492k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the structural transformation of organic copper phthalocyanine (CuPc) nanowires to hollowed rectangular nanotubes through the use of a hydrothermal process. The CuPc molecules have been chemically self-assembled into a form of nanowires, through reaction with trifluoroacetic acid. The mechanism of the chemical self-assembly for the CuPc nanowires is studied through analyzing the Fourier transform infrared spectra. After the hydrothermal process, it is observed that the alpha-phase CuPc nanowires are transformed to beta-phase CuPc rectangular nanotubes, with crystallinity in the (-101) direction. From X-ray diffraction patterns, the crystallinity of the CuPc nanowires is enhanced by annealing. The optical and electrical characteristics of the beta-phase crystalline CuPc rectangular nanotubes are compared with those of alpha-phase CuPc nanowires, using ultraviolet and visible absorption spectra and current voltage (I-V) characteristics. From the gate field-dependent I-V characteristics for a single nanowire/nanotube transistor, improved device performance in terms of the charge carrier mobility and the current on and off ratio have been observed in the beta-phase CuPc crystalline rectangular nanotube compared with the self-assembled alpha-phase CuPc nanowire, because of the relatively strong pi-pi interaction between the CuPc molecules.

引用

页码：2219 / 2225

页数：7

共 40 条

[1] High mobility single-crystal field-effect transistors from bisindoloquinoline semiconductors [J].