Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

被引：105
作者：
Chen, Min-Chen [1 ]
Chang, Ting-Chang [1 ,2 ]
Huang, Sheng-Yao [1 ]
Chen, Shih-Ching [1 ]
Hu, Chih-Wei [3 ,4 ]
Tsai, Chih-Tsung [1 ]
Sze, Simon M. [3 ,4 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 06期
关键词：
D O I：
10.1149/1.3360181
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohm's law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10(4) s at 90 degrees C and after 100 dc voltage sweeping cycles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3360181] All rights reserved.
引用
收藏
页码：II191 / II193
页数：3
相关论文
共 20 条
  • [1] [Anonymous], 2009, IEEE ELECT DEVICE LE
  • [2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
    Baek, IG
    Lee, MS
    Seo, S
    Lee, MJ
    Seo, DH
    Suh, DS
    Park, JC
    Park, SO
    Kim, HS
    Yoo, IK
    Chung, UI
    Moon, JT
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 587 - 590
  • [3] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    Chang, Wen-Yuan
    Lai, Yen-Chao
    Wu, Tai-Bor
    Wang, Sea-Fue
    Chen, Frederick
    Tsai, Ming-Jinn
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [4] Inkjet-printed InGaZnO thin film transistor
    Kim, Gun Hee
    Kim, Hyun Soo
    Shin, Hyun Soo
    Ahn, Byun Du
    Kim, Kyung Ho
    Kim, Hyun Jae
    [J]. THIN SOLID FILMS, 2009, 517 (14) : 4007 - 4010
  • [5] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
    Kim, Kyung Min
    Choi, Byung Joon
    Shin, Yong Cheol
    Choi, Seol
    Hwang, Cheol Seong
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [6] High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering
    Lim, Wantae
    Kim, SeonHoo
    Wang, Yu-Lin
    Lee, J. W.
    Norton, D. P.
    Pearton, S. J.
    Ren, F.
    Kravchenko, I. I.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) : H383 - H385
  • [7] Electric-pulse-induced reversible resistance change effect in magnetoresistive films
    Liu, SQ
    Wu, NJ
    Ignatiev, A
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2749 - 2751
  • [8] Materials science - Who wins the nonvolatile memory race?
    Meijer, G. I.
    [J]. SCIENCE, 2008, 319 (5870) : 1625 - 1626
  • [9] High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
    Na, Jong H.
    Kitamura, M.
    Arakawa, Y.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (06)
  • [10] Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
    Seo, Jung Won
    Park, Jae-Woo
    Lim, Keong Su
    Yang, Ji-Hwan
    Kang, Sang Jung
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (22)
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