Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

被引：260

作者：

Oh, SH ^{[1
]}

Monroe, D ^{[1
]}

Hergenrother, JM ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 09期

关键词：

double-gate MOSFET; MOSFET scaling; short-channel effect; surrounding-gate MOSFET;

D O I：

10.1109/55.863106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length lambda, over which the source and drain perturb the channel potential, is 1/pi of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

引用

页码：445 / 447

页数：3

共 10 条

[1] Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's [J].