Thermally-induced current injection across an n*-n junction

被引：2

作者：

Hagelstein, P ^{[1
]}

Kucherov, Y ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02 | 2002年

关键词：

D O I：

10.1109/ICT.2002.1190346

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Recent experiments with thermal to electric energy conversion in diode-like thermoelectric semiconductor structures show enhanced short-circuit currents and open-circuit voltages compared with thermoelectric performance. The experimental results are consistent with a current injection effect. We review the models that we have proposed to account for the effect.

引用

页码：400 / 403

页数：4