Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources

被引:4
作者
Lee, Wook-Jae [1 ,3 ]
Kim, Hyunseok [1 ]
Farrell, Alan C. [1 ]
Senanayake, Pradeep [1 ]
Huffaker, Diana L. [1 ,2 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[3] Cardiff Univ, Sch Engn, Cardiff CF24 3AA, S Glam, Wales
基金
美国国家科学基金会;
关键词
TEMPERATURE CW OPERATION; NANOWIRES; GROWTH;
D O I
10.1063/1.4942777
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductor nanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source. (C) 2016 AIP Publishing LLC.
引用
收藏
页数:4
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