Preliminary results of a novel low voltage M-OTP in MOS transistor in 28nm FD-SOI

For the first time, experimental results are reported on multi-one time programmable (M-OTP) device in 28 nm FD-SOI CMOS technology. The main approach relies on the functionalization of the source of a thick oxide NMOS. We demonstrate that it is possible to fuse the intrinsic silicide resistor by in-situ thermal assist and voltage bias through two split source contacts. Thermal resistor calibration and multi-one-time programmable mode in low and high temperature with associated read value are performed. Moreover, 3D TCAD electro-thermal simulations and physical failure analysis confirm the concept and electrical results. We have successfully reproduced the responses on several dice and wafers and shown similar performances. Finally, this first demonstrator opens the door to other studies and new device solutions, which could be applied to mature and advanced technology node(s).