Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

被引：15

作者：

Chen, Charlton J. ^{[1
]}

Husko, Chad A. ^{[1
]}

Meric, Inanc ^{[2
]}

Shepard, Ken L. ^{[2
]}

Wong, Chee Wei ^{[1
]}

Green, William M. J. ^{[3
]}

Vlasov, Yurii A. ^{[3
]}

Assefa, Solomon ^{[3
]}

机构：

[1] Columbia Univ, Opt Nanostruct Lab, New York, NY 10027 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

基金：

美国国家科学基金会;

关键词：

hafnium compounds; optical fabrication; optical interconnections; photonic crystals; ORDER DISPERSION; SILICON; PROPAGATION; STRAIN;

D O I：

10.1063/1.3308492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

引用

页数：3

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