The interface phase and the Schottky barrier for a crystalline dielectric on silicon

被引：156

作者：

McKee, RA ^{[1
]}

Walker, FJ

Nardelli, MB

Shelton, WA

Stocks, GM

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[2] Univ Tennessee, Knoxville, TN 37996 USA

[3] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

SCIENCE | 2003年 / 300卷 / 5626期

关键词：

D O I：

10.1126/science.1083894

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The barrier height for electron exchange at a dielectric-semiconductor interface has long been interpreted in terms of Schottky's theory with modi. cations from gap states induced in the semiconductor by the bulk termination. Rather, we show with the structure specifics of heteroepitaxy that the electrostatic boundary conditions can be set in a distinct interface phase that acts as a "Coulomb buffer." This Coulomb buffer is tunable and will functionalize the barrier-height concept itself.

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页码：1726 / 1730

页数：5

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