Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor

Transport properties of ferromagnetic/nonmagnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic-field, temperature, bias, and gate voltage. By designing the magnetic electrodes to have different switching fields, a two-mode device is realized having two stable magnetization states, with the electrodes aligned in parallel and antiparallel. Magnetoresistance of approximately 100% is measured in Co/AlOX/Al/AlOX/Co double tunnel junction spin valves at low bias, with the Al spacer in the superconducting state. The effect is substantially reduced at high bias and temperatures above the T-C of the Al. The experimental results are interpreted as due to spin imbalance of charge carriers resulting in suppression of the superconducting gap of the Al island. (C) 2003 American Institute of Physics.