Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

被引:11
作者
Murugapandiyan, P. [1 ]
Mohanbabu, A. [2 ]
Lakshmi, V. Rajya [1 ]
Wasim, Mohammed [3 ]
Sundaram, K. Meenakshi [4 ]
机构
[1] Anil Neerukonda Inst Technol & Sci, Dept Elect & Commun Engn, Visakhapatnam, Andhra Pradesh, India
[2] Karpagam Coll Engn, Dept Elect & Commun Engn, Coimbatore, Tamil Nadu, India
[3] Lovely Profess Univ, Dept Elect & Commun Engn, Jalandhar, Punjab, India
[4] Botho Univ, Fac Grad Studies & Res, Gaborone, Botswana
关键词
Quaternary barrier; double heterojunction; millimeter-wave; cut-off frequency; breakdown voltage; INALN/ALN/GAN HEMTS; F(T)/F(MAX);
D O I
10.1007/s11664-019-07731-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report direct current (DC) and microwave performance of a 50-nm gate length (L-g) quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC substrate with SiN passivation and by using a T-gate. The proposed HEMT structure is simulated using industry-standard Synopsys Sentaurus technology computer-aided design (TCAD). The regrown n++ GaN source/drain ohmic contacts show a peak drain current density (I-dmax) of 2.9 A/mm along with low on-resistance of 0.49 ohm mm. A record power gain cut-off frequency (f(max)) of 425 GHz along with current gain cut-off frequency (f(t)) of 310 GHz are obtained by the substantial reduction in the device's intrinsic and extrinsic parasitic resistances and capacitances. A very thin 7-nm In0.13Al0.83Ga0.04N quaternary barrier with an AlGaN back-barrier structure effectively mitigates the short-channel effect with an improved breakdown voltage (V-BR) of 38 V. The prominent DC and microwave characteristics of the proposed HEMT make it an appropriate candidate for next-generation high-power millimeter-wave electronics.
引用
收藏
页码:524 / 529
页数:6
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