Quantum-dot microlasers

被引：15

作者：

Rennon, S ^{[1
]}

Avary, K ^{[1
]}

Klopf, F ^{[1
]}

Wolf, A ^{[1
]}

Emmerling, M ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 18期

关键词：

D O I：

10.1049/el:20001084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fabricated on a GaInAs/AlGaAs laser structure with a single active las er of self-organised GaInAs quantum-dots. Continuous wave operation has been achieved down to cavity lengths of 16 mu m with a minimum threshold current of 1.2mA for 30 mu m-long devices.

引用

收藏

页码：1548 / 1550

页数：3

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