Technology and characterization of diamond field emitter structures

被引：8

作者：

Hong, DS ^{[1
]}

Aslam, DM ^{[1
]}

机构：

[1] Michigan State Univ, Dept Elect Engn, E Lansing, MI 48824 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

CVD; diamond materials; electron emission; finite element methods;

D O I：

10.1109/16.662815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp(3)/sp(2) ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron doped polycrystalline diamond films with low sp(3)/sp(2) ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields, Electric fields to initiate emission, measured at J = 0.01 mAcm(-2), are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions, The results of this study have important consequences for diamond triode field emitter displays.

引用

页码：977 / 985

页数：9

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