Instrumentation for the in situ control of carrier recombination characteristics during irradiation by protons

被引：11

作者：

Gaubas, E. ^{[1
]}

Uleckas, A. ^{[1
]}

Vaitkus, J. ^{[1
]}

Raisanen, J. ^{[2
]}

Tikkanen, P. ^{[2
]}

机构：

[1] Vilnius Univ, Inst Appl Res, Vilnius, Lithuania

[2] Univ Helsinki, Dept Phys, Div Mat Phys, FI-00014 Helsinki, Finland

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 05期

基金：

芬兰科学院;

关键词：

carrier lifetime; electron probes; microwave measurement; microwave spectra; photoconductivity; proton effects; SILICON; PARAMETERS; VELOCITY; BULK;

D O I：

10.1063/1.3429944

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Instrument and methods for the remote and in situ control of carrier recombination parameters during irradiation by protons of energy in the range of 3-8 MeV are presented. Direct techniques for measurements and separation of carrier recombination and trapping/generation characteristics based on the analysis of microwave probed photoconductivity transients during exposure on protons of different energies and irradiations at different temperatures are described. Simultaneously, a spectroscopy of activation energy of dominant traps has been performed before and just after irradiation by temperature scans of variation in the recombination parameters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3429944]

引用

页数：5

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