Investigation of the thermal conductivity of heavily-doped ZnSe had been carried out. The crystals used are closed-tube vapor diffusion grown ZnSe doped with iodine and has gone through a zinc vapor treatment, and that subsequently defused with indium, and that further diffused with indium with higher temperature. The present study found that the electronic part of the thermal conductivity, kappa(el), of these samples does not obey the theoretical rule that the thermal conductivity is directly proportional to the electrical conductivity, sigma, of the semiconductor. Instead, we have found that for the bulk heavily-doped ZnSe single crystals, kappa(el) (proportional to) aT(2) + d, where d is a constant with a value of 1>d greater than or equal to 0.
