11kW direct diode laser system with homogenized 55 x 20 mm2 Top-Hat intensity distribution

被引:4
作者
Koehler, Bernd [1 ]
Noeske, Axel [1 ]
Kindervater, Tobias [1 ]
Wessollek, Armin [1 ]
Brand, Thomas [1 ]
Biesenbach, Jens [1 ]
机构
[1] DILAS Diodenlaser GmbH, Galileo Galielei Str 10, D-55129 Mainz, Germany
来源
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V | 2007年 / 6456卷
关键词
high power diode laser; homogenization; beam shaping; direct diode; incoherent coupling;
D O I
10.1117/12.698837
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In comparison with other laser systems diode lasers are characterized by a unique overall efficiency, a small footprint and high reliability. However, one major drawback of direct diode laser systems is the inhomogeneous intensity distribution in the far field. Furthermore the output power of current commercially available systems is limited to about 6 kW. We report on a diode laser system with 11 kW output power at a single wavelength of 940 nm aiming for customer specific large area treatment. To the best of our knowledge this is the highest output power reported so far for a direct diode laser system. In addition to the high output power the intensity distribution of the laser beam is homogenized in both axes leading to a 55 x 20 mm(2) Top-Hat intensity profile at a working distance of 400 mm. Homogeneity of the intensity distribution is better than 90%. The intensity in the focal plane is 1 kW/cm(2). We will present a detailed characterization of the laser system, including measurements of power, power stability and intensity distribution of the homogenized laser beam. In addition we will compare the experimental data with the results of non-sequential raytracing simulations.
引用
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页数:12
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