Silicon nano-wires fabricated by a novel thermal evaporation of zinc sulfide

被引:9
作者
Niu, JJ
Sha, J
Yang, DR [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
nano-wires; silicon; sulfide-assisted;
D O I
10.1016/j.physe.2004.03.022
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nano-wires (SiNWs) with diameter of similar to 30 nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080degreesC for 1 h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfideassisted growth model of SiNWs was suggested. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:178 / 182
页数:5
相关论文
共 29 条
[1]   Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope [J].
Clément, N ;
Tonneau, D ;
Dallaporta, H ;
Bouchiat, V ;
Fraboulet, D ;
Mariole, D ;
Gautier, J ;
Safarov, V .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :999-1002
[2]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[3]   Laser-induced Fano resonance scattering in silicon nanowires [J].
Gupta, R ;
Xiong, Q ;
Adu, CK ;
Kim, UJ ;
Eklund, PC .
NANO LETTERS, 2003, 3 (05) :627-631
[4]   A new phenomenon in the floating-zone (FZ) growth of Si nanowires [J].
Hu, QL ;
Li, GQ ;
Suzuki, H ;
Araki, H ;
Ishikawa, N ;
Yang, W ;
Noda, T .
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (1-2) :64-68
[5]   Growth of silicon nanowires by chemical vapor deposition: approach by charged cluster model [J].
Hwang, NM ;
Cheong, WS ;
Yoon, DY ;
Kim, DY .
JOURNAL OF CRYSTAL GROWTH, 2000, 218 (01) :33-39
[6]   Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates [J].
Kamins, TI ;
Williams, RS ;
Hesjedal, T ;
Harris, JS .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :995-998
[7]  
Konstantinovic MJ, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.161311
[8]   Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates [J].
Lew, KK ;
Redwing, JM .
JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) :14-22
[9]   Silicon quantum-wires arrays synthesized by chemical vapor deposition and its micro-structural properties [J].
Lu, M ;
Li, MK ;
Kong, LB ;
Guo, XY ;
Li, HL .
CHEMICAL PHYSICS LETTERS, 2003, 374 (5-6) :542-547
[10]   Nanobelts, nanocombs, and nanowindmills of wurtzite ZnS [J].
Ma, C ;
Moore, D ;
Li, J ;
Wang, ZL .
ADVANCED MATERIALS, 2003, 15 (03) :228-+