Silicon nano-wires fabricated by a novel thermal evaporation of zinc sulfide
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作者:
Niu, JJ
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Niu, JJ
Sha, J
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Sha, J
Yang, DR
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, DR
[1
]
机构:
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
Silicon nano-wires (SiNWs) with diameter of similar to 30 nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080degreesC for 1 h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfideassisted growth model of SiNWs was suggested. (C) 2004 Elsevier B.V. All rights reserved.
机构:
Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USAPenn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA
Lew, KK
;
Redwing, JM
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Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USAPenn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA
机构:
Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USAPenn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA
Lew, KK
;
Redwing, JM
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机构:
Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USAPenn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA