Energy gap and optical properties of InxGal1-xN

被引：96
作者：
Bechstedt, F
Furthmüller, J
Ferhat, M
Teles, LK
Scolfaro, LMR
Leite, JR
Davydov, VY
Ambacher, O
Goldhahn, R
机构：
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Carlos, SP, Brazil
[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] Tech Univ, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany
[5] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 195卷 / 03期
关键词：
D O I：
10.1002/pssa.200306164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present ab initio calculations of the electronic structure and the optical properties of InxGa1-xN. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.
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收藏
页码：628 / 633
页数：6
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