Energy gap and optical properties of InxGal1-xN

被引：96

作者：

Bechstedt, F

Furthmüller, J

Ferhat, M

Teles, LK

Scolfaro, LMR

Leite, JR

Davydov, VY

Ambacher, O

Goldhahn, R

机构：

[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Carlos, SP, Brazil

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Tech Univ, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

[5] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 195卷 / 03期

关键词：

D O I：

10.1002/pssa.200306164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present ab initio calculations of the electronic structure and the optical properties of InxGa1-xN. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.

引用

页码：628 / 633

页数：6

共 33 条

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