30 Gbps Wireless Data Transmission with Fully Integrated 240 GHz Silicon Based Transmitter

被引：0

作者：

Eisenbeis, J. ^{[1
]}

Boes, F. ^{[1
]}

Goettel, B. ^{[1
]}

Malz, S. ^{[2
]}

Pfeiffer, U. ^{[2
]}

Zwick, T. ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, D-76131 Karlsruhe, Germany

[2] Univ Wuppertal, Inst High Frequency & Commun Technol, D-42119 Wuppertal, Germany

来源：

2017 IEEE 17TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2017年

关键词：

System-on-chip; Monolithic integrated circuits; Wireless communication; CHIPSET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present communication measurements with a fully integrated 240 GHz transmitter based on a single SiGe RF chip in 0.13 mu m Bi-CMOS technology. For an improved transmitter gain the on-chip antenna is built up using in-antenna power combining in conjunction with a dielectric 12mm silicon lens. The measurement results show that data rates of up to 30 Gbps are possible for 8-PSK modulated signals. For more robust communication with bit error ratio below 10(-3), data rates of 24 Gbps could be achieved using QPSK modulated signals, without any error correction.

引用

页码：33 / 36

页数：4

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