30 Gbps Wireless Data Transmission with Fully Integrated 240 GHz Silicon Based Transmitter

被引：0
|
作者：
Eisenbeis, J. [1 ]
Boes, F. [1 ]
Goettel, B. [1 ]
Malz, S. [2 ]
Pfeiffer, U. [2 ]
Zwick, T. [1 ]
机构：
[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, D-76131 Karlsruhe, Germany
[2] Univ Wuppertal, Inst High Frequency & Commun Technol, D-42119 Wuppertal, Germany
来源：
2017 IEEE 17TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2017年
关键词：
System-on-chip; Monolithic integrated circuits; Wireless communication; CHIPSET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present communication measurements with a fully integrated 240 GHz transmitter based on a single SiGe RF chip in 0.13 mu m Bi-CMOS technology. For an improved transmitter gain the on-chip antenna is built up using in-antenna power combining in conjunction with a dielectric 12mm silicon lens. The measurement results show that data rates of up to 30 Gbps are possible for 8-PSK modulated signals. For more robust communication with bit error ratio below 10(-3), data rates of 24 Gbps could be achieved using QPSK modulated signals, without any error correction.
引用
收藏
页码：33 / 36
页数：4
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