Crossed Andreev reflection versus electron transfer in three-terminal graphene devices

被引:15
|
作者
Haugen, Havard [1 ]
Huertas-Hernando, Daniel [1 ]
Brataas, Arne [1 ]
Waintal, Xavier [2 ]
机构
[1] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway
[2] SPSMS INAC CEA, F-38054 Grenoble 9, France
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 17期
关键词
MASSLESS DIRAC FERMIONS; QUANTUM TRANSPORT; SUPERCONDUCTOR; DEPENDENCE; MATRIX; STATE; EDGE;
D O I
10.1103/PhysRevB.81.174523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the transport properties of three-terminal graphene devices, where one terminal is superconducting and two are normal metals. The terminals are connected by nanoribbons. Electron transfer (ET) and crossed Andreev reflection (CAR) are identified via the nonlocal signal between the two normal terminals. Analytical expressions for ET and CAR in symmetric devices are found. We compute ET and CAR numerically for asymmetric devices. ET dominates CAR in symmetric devices, but CAR can dominate ET in asymmetric devices, where only the zero-energy modes of the zigzag nanoribbons contribute to the transport.
引用
收藏
页数:9
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