Dislocation activity in 4H-SiC in the brittle domain

被引：0

作者：

Demenet, J. L. ^{[1
]}

Amer, M. ^{[1
]}

Mussi, A. ^{[1
]}

Rabier, J. ^{[1
]}

机构：

[1] Univ Poitiers, UMR 6630, CNRS, SP2MI, F-86960 Futuroscope, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

dislocations; non-basal planes; high stress; SINGLE-CRYSTALS; DUCTILE TRANSITION; DEFECTS; DEFORMATION; TEMPERATURE; PLASTICITY; FRACTURE; SILICON; STRESS; CORES;

D O I：

10.4028/www.scientific.net/MSF.645-648.335

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Results of deformation experiments on 4H-SiC single crystals below the usual brittle to ductile transition temperature are reported and discussed in comparison of previous literature data. Si-core and C-core partials are evidenced in the basal plane, and perfect dislocations are also observed on other crystallographic planes. These results could indicate that dislocation activity under high stress is more complex than expected.

引用

页码：335 / 338

页数：4

共 16 条

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