Wide tuning-range MOS varactors based on SOI

被引：0

作者：

Yan, T ^{[1
]}

Zhang, GY ^{[1
]}

Shi, H ^{[1
]}

Huang, R ^{[1
]}

Zhang, X ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS Varactors based on SOI substrate with very wide tuning-range are presented in this paper. Compared with bulk silicon substrate. varactors based on SOI substrate have wider tuning-range due to less parasitic capacitance. These varactors, including n-type accumulation mode MOS varactor (AMOS), n-type gated diode (GD) and p-type GD, are fabricated with the same CMOS process technology and compared with bulk ones. Results show SOI varactors' tuning, range is wider than bulk ones' to a large extent.

引用

页码：206 / 208

页数：3

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