A Reliability Study of Non-uniform Si TFET with Dual Material Source: Impact of Interface Trap Charges and Temperature

被引：1

作者：

Talukdar, Jagritee ^{[1
]}

Mummaneni, Kavicharan ^{[1
]}

机构：

[1] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India

来源：

SILICON | 2022年 / 14卷 / 09期

关键词：

NUTFET-DMS; Interface trap charges; Parasitic capacitance; BTBT; Reliability; TUNNEL FET; BACK GATE; DEVICE;

D O I：

10.1007/s12633-021-01224-y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The article reports the extraction of DC characteristics and small signal parameters of Non-uniform Si TFET with dual material source (NUTFET-DMS) at different frequencies followed by its reliability investigation. The reliability of the device is examined by analysing: (1) the impact of the presence of interface trap charges, (2) the impact of temperature variation (200- 400 K). In the analysis it has been observed that in case of absence of interface trap charges the increase in frequency reduces the value of parasitic capacitances. In addition, the presence of interface trap charges lessens the value of parasitic capacitances up to a certain gate to source voltage after that it shows a reverse effect. Further, it has been perceived that the effect of change in temperature is more on device ambipolar current when interface trap charges are present, whereas the reverse is true in the case of OFF state current and different parasitic capacitances.

引用

页码：4515 / 4521

页数：7

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