Pulsed excimer laser ablated copper indium diselenide thin films

被引：19

作者：

Victor, P

Nagaraju, J

Krupanidhi, SB ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 12期

关键词：

laser ablation; thin films; rapid thermal annealing;

D O I：

10.1016/S0038-1098(00)00409-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CuInSe2 thin films of thickness in the range of 0.45-1.8 mum were deposited on glass, Pt coated Si and Mo substrates by pulsed laser ablation at 150 degreesC. Rapid thermal annealing (RTA) at a high heating rate was employed and its effect on crystallinity of the films was investigated. X-ray diffraction patterns of the RTA films, exhibited a highly preferred orientation along the (112) plane establishing the chalcopyrite structure. The composition of the as-grown and RTA films maintained the required stoichiometry ratios uniformly over a reasonable area. The EDAX composition analysis revealed that the films annealed at 500 degreesC for 20 s were slightly indium I ich, which consequently led the films to exhibit an n-type conductivity. However, RTA processing of the as-grown films at a higher temperature under controlled soaking time transformed the films to exhibit a p-type conductivity. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：649 / 653

页数：5

共 10 条

[1] Antiferroelectric lead zirconate thin films by pulsed laser ablation [J].