Three-dimensional resolved shear stresses in off-axis grown SiC single crystals

被引:8
作者
Boettcher, Klaus
Cliffe, K. Andrew
机构
[1] Forschungsverbund Berlin eV, Inst Kristallzuchtung, D-12489 Berlin, Germany
[2] Univ Nottingham, Sch Math Sci, Nottingham NG7 2RD, England
关键词
computer simulation; stresses; growth from vapour;
D O I
10.1016/j.jcrysgro.2006.11.162
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Three-dimensional (3D) thermoelastic stresses are computed for SiC single crystals which are grown with an off-axis orientation of the seed. The geometry is axisymmetric. The results are presented in terms of the resolved shear stress acting on the slip system. While in the on-axis case the resolved shear stress consists only of the component a,., in the off-axis case it consists of all stress components, whereas the dominant components are sigma(rz) sigma(rr) and sigma(zz). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:310 / 313
页数:4
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