Three-dimensional resolved shear stresses in off-axis grown SiC single crystals

被引：8

作者：

Boettcher, Klaus

Cliffe, K. Andrew

机构：

[1] Forschungsverbund Berlin eV, Inst Kristallzuchtung, D-12489 Berlin, Germany

[2] Univ Nottingham, Sch Math Sci, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 01期

关键词：

computer simulation; stresses; growth from vapour;

D O I：

10.1016/j.jcrysgro.2006.11.162

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three-dimensional (3D) thermoelastic stresses are computed for SiC single crystals which are grown with an off-axis orientation of the seed. The geometry is axisymmetric. The results are presented in terms of the resolved shear stress acting on the slip system. While in the on-axis case the resolved shear stress consists only of the component a,., in the off-axis case it consists of all stress components, whereas the dominant components are sigma(rz) sigma(rr) and sigma(zz). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：310 / 313

页数：4

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