Electrical, and field emission properties of nanocrystalline materials fabricated by electron-beam induced deposition

被引:35
|
作者
Schossler, C
Kaya, A
Kretz, J
Weber, M
Koops, HWP
机构
[1] Deutsche Telekom AG, Forschungszentrum, D - 64295 Darmstadt
[2] Institut für Angewandte Physik, Technische Hochschule Darmstadt, D - 64289 Darmstadt
关键词
Aspect ratio - Crystal growth - Crystal structure - Current voltage characteristics - Deposition - Electric conductivity - Electron beams - Scanning electron microscopy - Silicon wafers - Single crystals - Substrates - Transmission electron microscopy;
D O I
10.1016/0167-9317(95)00290-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three-dimensional structures of nanometer dimensions can be fabricated by electron-beam induced deposition. The technique allows accurate placement of arbitrary shaped structures onto existing substrates at a single process step. It allows tips to be produced with an ultimate radius of curvature for scanning probe techniques or field emission applications. Electron-beam induced deposition from organometallic precursors produces small metallic crystallites embedded in an amorphous, carbon-containing matrix. The electrical conductivity of these deposits is highly dependent on the deposition conditions. The conductivity of material with low metal contents is found to be of Poole-Frenkel type. Field emission tips working with low extraction voltages are obtained. A high current is accomplished due to the multiple emission centers available at the front of the tip. Beam confinement to one emission site is demonstrated for the first time for a deposited supertip.
引用
收藏
页码:471 / 474
页数:4
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