Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

被引：66

作者：

Ketteniss, N. ^{[1
]}

Khoshroo, L. Rahimzadeh ^{[1
]}

Eickelkamp, M. ^{[1
]}

Heuken, M. ^{[1
,2
]}

Kalisch, H. ^{[1
]}

Jansen, R. H. ^{[1
]}

Vescan, A. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Chair Electromagnet Theory, D-52074 Aachen, Germany

[2] AIXTRON AG, D-52134 Herzogenrath, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 07期

关键词：

D O I：

10.1088/0268-1242/25/7/075013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on AlInGaN/GaN heterostructure field effect transistors (HFETs) and the effect of different barrier material compositions. The analytical model for the interface charge in quaternary nitride heterostructures is described in detail and is applied in the calculation of the expected sheet carrier density. Experimental results from different lattice-matched AlInGaN/GaN heterostructures are presented and compared with the analytical predictions. Three heterostructures with AlInGaN barriers grown on sapphire substrates were processed and have been investigated. Each barrier layer was lattice-matched to GaN and the gallium content was 0.1, 0.15 and 0.2 at a barrier thickness of 13.5, 12.8 and 11.3 nm, respectively. Additionally, from these experiments, the basic trends for quaternary nitride Schottky barrier contacts are discussed. Finally, comprehensive dc characterizations have been performed. All devices had a gate length of 1 mu m and exhibited a good transconductance of around 260 mS mm(-1) at nearly the same current density level. An increase in threshold voltage as well as a decrease in gate leakage current for increasing GaN content has been observed. The nearly constant electron mobility in the range of 1700 cm(2) V(-1) s(-1) at room temperature is within the best reported so far for HFETs with InN-containing barriers.

引用

页数：5

共 18 条

[11] ] Quaternary nitride heterostructure field effect transistors [J].

Khoshroo, L. Rahimzadeh ;

Ketteniss, N. ;

Mauder, C. ;

Behmenburg, H. ;

Woitok, J. F. ;

Booker, I. ;

Gruis, J. ;

Heuken, M. ;

Vescan, A. ;

Kalisch, H. ;

Jansen, R. H. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[12]

LU B, 2008, WORKSH NITR SEM MONT

[13]

PALACIOS T, 2007, NITRIDE SEMICONDUCTO, P213

[14] Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering [J].

Roff, Chris ;

Benedikt, Johannes ;

Tasker, Paul J. ;

Wallis, David J. ;

Hilton, Keith P. ;

Maclean, Jessica O. ;

Hayes, David G. ;

Uren, Michael J. ;

Martin, Trevor .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (01) :13-19

[15]

Sze S M., 2006, Physics of Semiconductor Devices, P134, DOI [10.1002/9780470068328.ch3, DOI 10.1002/9780470068328.CH3]

[16] Recent advances in Schottky barrier concepts [J].

Tung, RT .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2001, 35 (1-3) :1-138

[17] Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures [J].

Wong, LW ;

Cai, SJ ;

Li, R ;

Wang, K ;

Jiang, HW ;

Chen, M .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1391-1393

[18] High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors [J].

Xie, Jinqiao ;

Ni, Xianfeng ;

Wu, Mo ;

Leach, Jacob H. ;

Ozguee, Umit ;

Morkoc, Hadis .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

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