Subthreshold voltage noise due to channel fluctuations in active neuronal membranes

被引:102
作者
Steinmetz, PN [1 ]
Manwani, A
Koch, C
London, M
Segev, I
机构
[1] CALTECH, Computat & Neural Syst Program, Pasadena, CA 91125 USA
[2] Hebrew Univ Jerusalem, Inst Life Sci, Dept Neurobiol, IL-91904 Jerusalem, Israel
[3] Hebrew Univ Jerusalem, Ctr Neural Computat, IL-91904 Jerusalem, Israel
基金
美国国家科学基金会;
关键词
membrane noise; active ion channels; Markov kinetic models; stochastic ion channels;
D O I
10.1023/A:1008967807741
中图分类号
Q [生物科学];
学科分类号
07 ; 0710 ; 09 ;
摘要
Voltage-gated ion channels in neuronal membranes fluctuate randomly between different conformational states due to thermal agitation. Fluctuations between conducting and nonconducting states give rise to noisy membrane currents and subthreshold voltage fluctuations and may contribute to variability in spike timing. Here we study subthreshold voltage fluctuations due to active voltage-gated Na+ and K+ channels as predicted by two commonly used kinetic schemes: the Mainen et al. (1995) (MJHS) kinetic scheme, which has been used to model dendritic channels in cortical neurons, and the classical Hodgkin-Huxley (1952) (HH) kinetic scheme for the squid giant axon. We compute the magnitudes, amplitude distributions, and power spectral densities of the voltage noise in isopotential membrane patches predicted by these kinetic schemes. For both schemes, noise magnitudes increase rapidly with depolarization from rest. Noise is larger for smaller patch areas but is smaller for increased model temperatures. We contrast the results from Monte Carlo simulations of the stochastic nonlinear kinetic schemes with analytical, closed-form expressions derived using passive and quasi-active linear approximations to the kinetic schemes. For all subthreshold voltage ranges, the quasi-active linearized approximation is accurate within 8% and may thus be used in large-scale simulations of realistic neuronal geometries.
引用
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页码:133 / 148
页数:16
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