Hybrid integrated silicon nitride lasers

被引:10
作者
Epping, Jorn P. [1 ]
Leinse, Arne [1 ]
Oldenbeuving, Ruud M. [1 ]
Visscher, Ilka [1 ]
Geuzebroek, Douwe [1 ]
Geskus, Dimitri [1 ]
van Rees, Albert [2 ]
Boller, Klaus J. [2 ]
Theurer, Michael [3 ]
Moehrle, Martin [3 ]
Schell, Martin [3 ]
Roeloffzen, Chris G. H. [1 ]
Heideman, Rene G. [1 ]
机构
[1] LioniX Int BV, Hengelosestr 500, NL-7521 AN Enschede, Netherlands
[2] Univ Twente, Drienerlolaan 5, NL-7522 NB Enschede, Netherlands
[3] Fraunhofer Heinrich Hertz Inst, D-10587 Berlin, Germany
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIII | 2020年 / 11274卷
关键词
D O I
10.1117/12.2552264
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleXT. By combining the active functionality of InP with the ultra-low loss properties of the TriPleXT platform narrow linewidth lasers in the C-band are realized. The InP platform is used for light generation and the TriPleXT platform is used to define a long cavity with a wavelength-selective tunable filter. The TriPleXT platform has the ability to adapt mode profiles over the chip and is extremely suitable for mode matching to the other platforms for hybrid integration. The tunable filter is based on a Vernier of micro-ring resonators to allow for single-mode operation, tunable by thermo-optic or stress-induced tuning. This work will show the operational principle and benefits of the hybrid lasers and the state of the art developments in the realization of these lasers. High optical powers (>100 mW) are combined with narrow linewidth (< 1 kHz) spectral responses with tunability over a large (>100 nm) wavelength range and a low relative intensity (< -160 dB/Hz).
引用
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页数:10
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