Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors

被引：41
作者：
Zheng, Zhouming [1 ]
Jiang, Jie [1 ]
Guo, Junjie [1 ]
Sun, Jia [1 ]
Yang, Junliang [1 ]
机构：
[1] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Hunan Key Lab Super Microstruct & Ultrafast Proc, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
来源：
ORGANIC ELECTRONICS | 2016年 / 33卷
基金：
中国国家自然科学基金;
关键词：
Aluminum-doped zinc oxide; Chitosan polymer; Thin-film transistors; Electric-double-layer; DOUBLE-LAYER TRANSISTORS; FIELD-EFFECT TRANSISTORS; POLYMER SOLAR-CELLS; TIO2; NANOPARTICLES; TIN-OXIDE; PERFORMANCE; MECHANISM; EFFICIENT;
D O I：
10.1016/j.orgel.2016.03.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low-voltage transparent indium-free aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) are demonstrated by using chitosan polymer electrolyte as the gate dielectric. Chitosan with a large specific capacitance (0.4 mu F/cm(2)) is obtained possibly due to the strong electric-double-layer (EDL) effect through the mobile-proton hopping mechanism. Herein, low-cost indium-free AZO film is developed for replacing the traditional ITO/IZO electrodes. A simple method is developed to fabricate all of the channel and source/drain electrodes during one-step sputter process by using such a low-cost indium-free AZO film. The optimized TFTs with 30 nm AZO thickness shows the best performance with a low operation voltage of 1.5 V, a large on-off ratio of 10(5), and a field-effect mobility of 8.3 cm(2)/Vs, respectively. The chitosan-gated AZO TFTs may provide a good candidate for the applications of next-generation transparent flexible low-cost portable electronics. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：311 / 315
页数：5
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