Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy

被引：4

作者：

Sawahata, Junji ^{[1
]}

Seo, Jongwon ^{[1
]}

Takiguchi, Mikio ^{[1
]}

Saito, Daisuke ^{[1
]}

Nemoto, Shinya ^{[1
]}

Akimoto, Katsuhiro ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 420-423期

关键词：

crystal structure; molecular beam epitaxy; nitrides; rare earth compounds;

D O I：

10.1016/j.jcrysgro.2006.11.102

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy were investigated. The Eu-related luminescence originating from D-5(0)-F-7(2) transition of Eu3+ was observed in the wavelength range of 620-624 nm under above-gap and below-gap excitations. Two luminescence peaks at 620.3 and 622.2 nm were observed in Eu-doped GaN with the Eu concentration of 1 at% under above-gap excitation, and a single peak at 620.3 nm was observed under below-gap excitation, suggesting multiple incorporation sites of Eu in GaN. The intensity ratio of the two peaks was found to vary with the V/III ratio. It was suggested that the incorporation site of Eu in Eu-doped GaN is sensitive to the V/III ratio. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：420 / 423

页数：4

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