The use of electron holography for composition profiling of semiconductor heterostructures

被引:0
作者
Midgley, PA [1 ]
Barnard, J [1 ]
Cherns, D [1 ]
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
来源
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期
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中图分类号
TH742 [显微镜];
学科分类号
摘要
The possibility of applying off-axis electron holography in a FEGTEM to determine the composition profile of semiconductor heterostructures has been investigated. This paper reviews how to record a hologram, its subsequent processing and phase reconstruction. It is shown how a phase change can be related to a change in the mean inner potential and thus to a change in composition. An analysis of a Si1-xGex quantum dot structure is given as an example of how quantitative composition profiles can be obtained at nanometre resolution.
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页码:75 / 78
页数:4
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