Red emission from Eu-implanted GaN

Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D(0) -->F-7(2) transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to D-5(1) -->F-7(1) and D-5(0) -->F-7(1,2,3) transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices.