Inverse class-E amplifier with transmission-line earmonic suppression

被引：56
作者：
Mury, Thian [1 ]
Fusco, Vincent F. [1 ]
机构：
[1] Queens Univ Belfast, Inst Elect Commun & Informat Technol, Belfast BT3 9DT, Antrim, North Ireland
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2007年 / 54卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
class E; GaAs MESFET; Gaussian minimum shift keying (GMSK) modulation; harmonic suppression; high efficiency; RF amplifier; transmission line; zero current switching;
D O I：
10.1109/TCSI.2007.899617
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the design methodology and experimental characterization of the inverse Class-E power amplifier. A demonstration amplifier with excellent second and third harmonic-suppression levels has been designed, constructed, and measured. The circuit fabricated using a 1.2-min gate-width GaAs MESFET is shown to be able to deliver 22-dBm output power at 2.3 GHz. The amplifier achieves a peak power-added efficiency of 64 % and drain efficiency of 69 %, and exhibits 11.6 dB power gain when operated from a 3-V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being obtained. Experimental results are presented for the amplifier's response to Gaussian minimum shift keying modulation, where a peak error vector modulation value of 0.6% is measured.
引用
收藏
页码：1555 / 1561
页数：7
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