First-principles studies of isomerization processes of silicon clusters

被引:12
|
作者
Tsetseris, L. [1 ]
Hadjisavvas, G.
Pantelides, S. T.
机构
[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 04期
关键词
D O I
10.1103/PhysRevB.76.045330
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The coexistence of a large number of isomers is one of the defining properties of nanoclusters. Here we report first-principles calculations of activation energies of silicon isomer transformations using a method for constructing low-energy isomers. We find that isomers form distinct classes. Within a class, intraconversion of a cluster is mediated by low-barrier bond switches in the interior. Interclass conversion requires high-barrier bond breaking in the outer ring structure. The results are consistent with experimental measurements and they have implications for theoretical searches of low-energy cluster structures.
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页数:5
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