AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

被引：28

作者：

Guo, Shiping ^{[1
]}

Gao, Xiang ^{[1
]}

Gorka, Daniel ^{[1
]}

Chung, Jinwoork W. ^{[2
]}

Wang, Han ^{[2
]}

Palacios, Tomas ^{[2
]}

Crespo, Antonio ^{[3
]}

Gillespie, James K. ^{[3
]}

Chabak, Kelson ^{[3
]}

Trejo, Manuel ^{[3
]}

Miller, Virginia ^{[3
]}

Bellot, Mark ^{[3
]}

Via, Glen ^{[3
]}

Kossler, Mauricio ^{[3
]}

Smith, Howard ^{[3
,4
]}

Tomich, David ^{[3
]}

机构：

[1] IQE RF LLC, Somerset, NJ 08873 USA

[2] MIT, Cambridge, MA 02139 USA

[3] AFRL Sensors Directorate, Wright Patterson AFB, OH 45424 USA

[4] Univ Dayton, Res Inst, Dayton, OH 45424 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 06期

关键词：

AlInN; MOVPE; heterojunction; high mobility electron transistor; 2DEG; DEVICES;

D O I：

10.1002/pssa.200983621

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R-sh of 215 Omega/sq was obtained with an excellent standard deviation of 1.1% across 3 '' wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm(2)/Vs and sheet charge density of 1.76 x 10(13)/cm(2). DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1 mu m and 25 nm Al2O3 passivation show maximum drain current (I-DS,I-max) of 2.36 A/mm at V-GS = 2 V. Gate recessed devices with 0.15 mu m gate length and 25 nm Al2O3 passivation resulted in maximum transconductance (g(m)) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f(T) is 86 GHz and f(max) is 91.7 GHz. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1348 / 1352

页数：5

共 11 条

[1] Current status of AlInN layers lattice-matched to GaN for photonics and electronics [J].