Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

被引:81
|
作者
Kumar, Piyush [1 ]
Bhadoria, B. S. [2 ]
Kumar, Sanjay [3 ]
Bhowmick, Somnath [4 ]
Chauhan, Yogesh Singh [1 ]
Agarwal, Amit [3 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[2] Bundelkhand Univ, Dept Phys, Jhansi 284128, Uttar Pradesh, India
[3] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[4] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
关键词
BLACK PHOSPHORUS; MONOLAYER; STRAIN; PERMITTIVITY; ANISOTROPY; INSULATOR; ORDER; MOS2;
D O I
10.1103/PhysRevB.93.195428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on extensive first-principles calculations, we explore the thickness-dependent effective dielectric constant and slab polarizability of few-layer black phosphorene. We find that the dielectric constant in ultrathin phosphorene is thickness-dependent and it can be further tuned by applying an out-of-plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene is a direct consequence of the lower permittivity of the outer layers and the increasing surface-to-volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness-and electric-field-dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance and charge screening are important.
引用
收藏
页数:8
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