Understanding the Origin of Unusual I-V Curves seen in Field Deployed PV Modules

被引：0

作者：

Golive, Yogeswara Rao ^{[1
]}

Koshta, Deepanshu ^{[1
]}

Rane, Karan P. ^{[1
]}

Kottantharayil, Anil ^{[1
]}

Vasi, Juzer ^{[1
]}

Shiradkar, Narendra ^{[1
]}

机构：

[1] Indian Inst Technol, Natl Ctr Photovolta Res & Educ Elect Engn, Mumbai, Maharashtra, India

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

SPICE model; photovoltaic module; Solar cell; bypass diode; Potential Induced Degradation Introduction;

D O I：

10.1109/pvsc45281.2020.9300884

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Simulation models for I-V characteristics of PV modules under mismatch conditions often assume ideal bypass diode and ignore the reverse leakage current of cells. In this paper, we present a SPICE based model in which customized reverse leakage current and real I-V characteristics of bypass diodes can be specified. This model is used to gain insight into root causes of some of the unusual I-V characteristics seen in field deployed modules. Different mismatch scenarios for a PV module were simulated for both the modules made up of leaky and non-leaky cells, and the resultant I-V curves were compared. The effect of Potential Induced Degradation (PID) on the I-V curves of PV modules was also simulated under the presence of mismatch. Using this model, we accurately reproduced the I-V characteristics of fielded modules degraded due to PID, and Bypass Diode failure in the short circuit condition.

引用

页码：2166 / 2170

页数：5