Controlling the electrical transport properties of graphene by in situ metal deposition

被引：72

作者：

Ren, Yujie ^{[1
,2
,3
]}

Chen, Shanshan ^{[1
,2
,4
]}

Cai, Weiwei ^{[1
,2
,4
]}

Zhu, Yanwu ^{[1
,2
]}

Zhu, Chaofu ^{[3
]}

Ruoff, Rodney S. ^{[1
,2
]}

机构：

[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[2] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA

[3] Univ Sci & Technol Beijing, Sch Mech Engn, Beijing 100083, Peoples R China

[4] Xiamen Univ, Dept Phys, Fujian Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

基金：

中国国家自然科学基金;

关键词：

FILMS; GAS;

D O I：

10.1063/1.3471396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition effect of metals on graphene was studied by in situ field effect transistor (FET) measurements in high vacuum. Metals such as gold (Au), silver (Ag), and copper (Cu) were deposited onto clean graphene surfaces, followed by FET measurements. The results show that Ag and Cu cause a shift in the Fermi level in the graphene from the Dirac point into the conduction band while Au causes a shift into the valence band. The induced carrier concentration was estimated at 2-6 X 10(12)/cm(2). The shifts in the Fermi level of the graphene are explained by the different work functions of these metals. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3471396]

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