Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric

被引：13

作者：

Chen, Xiangyu ^{[1
]}

Ou-Yang, Wei ^{[1
]}

Weis, Martin ^{[1
]}

Taguchi, Dai ^{[1
]}

Manaka, Takaaki ^{[1
]}

Iwamotoy, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 02期

关键词：

POLYMER;

D O I：

10.1143/JJAP.49.021601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the reduction of hysteresis in pentacene organic field-effect transistors (OFETs) with a ferroelectric poly(vinylidene fluoride and trifluoroethylene) [P(VDF-TrFE)] dipole layer used as a coating of silicon dioxide gate insulator. Although the OFETs without the dipole layer exhibited a hysteresis caused by carrier trapping, such hysteresis was not observed for the OFETs with the P(VDF-TrFE) layers. Experiments showed that the induced hysteresis could be regulated by the number of P(VDF-TrFE) dipole layers, which were deposited by the Langmuir-Blodgett (LB) technique or the spin-coating method. Finally, we showed that analysis based on an electrostatic model well accounted for the experimental results, i.e., the reduction of hysteresis by means of the ferroelectric layer. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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