Photoresist Passivation Structures for Laser Lifted-Off Light Emitting Diodes

被引：4

作者：

Kim, Sunjung ^{[1
]}

机构：

[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 07期

关键词：

MECHANICAL-PROPERTIES; SU-8; PHOTORESIST; OPTIMIZATION;

D O I：

10.1149/1.3416375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SU-8 photoresist passivation structures were used to protect vertical structure GaN-based light emitting diodes from explosive forces produced during the laser lift-off (LLO) process of a sapphire substrate. The soft bake time of SU-8, which determines the solvent content, was varied to measure the mechanical properties of SU-8 at different dilution ratios. The SU-8 attained a sufficient hardness of 0.23 GPa and a Young's modulus greater than 4.0 GPa, regardless of soft bake time and dilution ratio. The SU-8 passivation structures with good damping properties showed excellent protection of the weak GaN-based layers from the LLO process. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3416375] All rights reserved.

引用

页码：H240 / H243

页数：4

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