Development of Bi-Spectral InAs/GaSb Type II Super lattice Image Detectors

被引：16

作者：

Stadelmann, T. ^{[1
]}

Woerl, A. ^{[1
]}

Wauro, M. ^{[1
]}

Daumer, V. ^{[1
]}

Niemasz, J. ^{[1
]}

Luppold, W. ^{[1
]}

Simon, T.

Riedel, M. ^{[2
]}

Rehm, R. ^{[1
]}

Walther, M. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] AIM Infrarot Module GmbII, D-74072 IIeilbronn, Germany

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XL | 2014年 / 9070卷

关键词：

InAs/GaSb; type II; superlattice; infrared; image sensor; SUPERLATTICES;

D O I：

10.1117/12.2049951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/GaSb superlattices are characterized by a broken-gap type II band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.

引用

页数：7

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