Fabrication and characterization of a novel bulk Si micromachined distributed microwave phase shifter

被引:0
作者
Miao, M [1 ]
Jin, YF [1 ]
Zhang, JW [1 ]
Wu, GY [1 ]
Hao, YL [1 ]
Zhang, HX [1 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3 | 2004年
关键词
MEMS; microwave; phase shifter; fabrication; characterization; bulk micromachining;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In order to implement X and K band micromachined phase shifter based on single crystal silicon material and thus featuring good micro-mechanical properties, a novel digital phase shifter is proposed, designed and successfully realized with bulk Si micromachining method by the authors. Utilizing the mechanism of nonlinear transmission line, it delivers true time delay through distributed archietecture. Instead of varactors in tradition devices, butterfly-like micromachined multiplayer bridges of single crystal Si-based laminate composite structure (Si/SiO2/Cr/Au/SiN) are used as the loading varactors. The microstructure can provide excellent mechanical performance over those with pure metal (alloy) microbridges because of the Si skeleton with good mechanical properties and the avoidance of the metal creep and thermal incompatability between the microbridges and dielectric substrate. The fabrication flow is introduced, which is a combination of Si etching and anodic bonding. The quasi-static actuation test was performed and showed a threshold voltage of 45similar to60V. The microwave test was made-on an Agilent Vector Network Analyzer combined with a Cascade microwave probing system. It can be seen from the result that the phase shift varies linearly with frequency and rise up to 82.4degrees @20.5GHz. Tapered adaptation sections at both ends of the device provide good impedance transformation and secure a good reflection performance in a wide frequency range (5similar to20.5GHz).
引用
收藏
页码:286 / 289
页数:4
相关论文
共 7 条
[1]  
Koul S. K., 1991, MICROWAVE MILLIMETER
[2]  
LEHNE PH, 1999, IEEE COMMUNICATIONS, P2
[3]   Distributed analog phase shifters with low insertion loss [J].
Nagra, AS ;
York, RA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (09) :1705-1711
[4]   Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360° phase shift at 20 GHz [J].
Nagra, AS ;
Xu, J ;
Erker, E ;
York, RA .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1999, 9 (01) :31-33
[5]  
Rebeiz G. M., 2003, RF MEMS THEORY DESIG
[6]   GAAS NONLINEAR TRANSMISSION-LINES FOR PICOSECOND PULSE GENERATION AND MILLIMETER-WAVE SAMPLING [J].
RODWELL, MJW ;
KAMEGAWA, M ;
YU, R ;
CASE, M ;
CARMAN, E ;
GIBONEY, KS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (07) :1194-1204
[7]   ACTIVE AND NONLINEAR-WAVE PROPAGATION DEVICES IN ULTRAFAST ELECTRONICS AND OPTOELECTRONICS [J].
RODWELL, MJW ;
ALLEN, ST ;
YU, RY ;
CASE, MG ;
BHATTACHARYA, U ;
REDDY, M ;
CARMAN, E ;
KAMEGAWA, M ;
KONISHI, Y ;
PUSL, J ;
PULLELA, R .
PROCEEDINGS OF THE IEEE, 1994, 82 (07) :1037-1059