Gas Sensing Ability on Polycrystalline-Silicon Nanowire

被引：10

作者：

Lo, Yen-Ren ^{[1
]}

Chen, Huang-Ming Philip ^{[2
,3
]}

Yang, Yuh-Shyong ^{[1
]}

Lu, Ming-Pei ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Inst Biol Sci & Technol, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Biomed Engn, Hsinchu, Taiwan

[4] Natl Appl Res Labs, Natl Nano Device Labs, Hsinchu, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 07期

关键词：

LABEL-FREE; SENSORS; FABRICATION; ARRAYS;

D O I：

10.1149/2.0161807jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single-and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor. (C) The Author(s) 2018. Published by ECS.

引用

页码：Q3104 / Q3107

页数：4

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