Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II

被引：2

作者：

Takaishi, J. ^{[1
]}

Harada, S. ^{[1
]}

Tsukuda, M. ^{[2
]}

Omura, I. ^{[1
]}

机构：

[1] Kyushu Inst Technol, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan

[2] Int Ctr Study East Asian Dev, Wakamatsu Ku, Kitakyushu, Fukuoka, Japan

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

IGBT; Compact model; Analytical model; Trade-off; Turn-off loss; Dynamic avalanche; DEVICES; DESIGN;

D O I：

10.1016/j.microrel.2014.07.158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compact model for expressing turn-off waveform for advanced trench gate IGBTs is proposed even under high current density condition. The model is analytically formulated only with device structure parameters so that no fitting parameters are required. The validity of the model is confirmed with TCAD simulation for 1.2-6.5 kV class IGBTs. The proposed turn-off model is sufficiently accurate to calculate trade-off curve between turn-off loss and saturation collector voltage under extremely high current conduction, so that the model can be used for system design with the advanced trench gate IGBTs. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1891 / 1896

页数：6

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