Experimental Validation of Newly Fabricated Normally-On GaN High-Electron-Mobility Transistor

被引：0

作者：

Ishibashi, Takaharu ^{[1
,5
]}

Okamoto, Masayuki ^{[2
,5
]}

Hiraki, Eiji ^{[1
,5
]}

Tanaka, Toshihiko ^{[1
,5
]}

Hashizume, Tamotsu ^{[3
,5
]}

Kikuta, Daigo ^{[4
,5
]}

Kachi, Tetsu ^{[4
,5
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Ube, Yamaguchi 755, Japan

[2] Ube Natl Coll Technol, Ube, Yamaguchi, Japan

[3] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 060, Japan

[4] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi, Japan

[5] JST, CREST, Chiyoda Ku, Tokyo, Japan

来源：

2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年

基金：

日本科学技术振兴机构;

关键词：

WIDE BANDGAP SEMICONDUCTORS; POWER DEVICES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.

引用

页码：1584 / 1591

页数：8