Preparative technique of ZnO thin film and application research in solar cell

被引：0
|
作者：
Hu Liang [1 ]
Huang Long [1 ]
Yang Ganlan [1 ]
Huang Chengzhong [1 ]
机构：
[1] Jiangxi Sci & Technol Normal Univ, Nanchang, Jiangxi, Peoples R China
来源：
MANUFACTURE ENGINEERING AND ENVIRONMENT ENGINEERING, VOLS 1 AND 2 | 2014年 / 84卷
关键词：
ZnO thin film; RF magnetron sputtering; solar cell;
D O I：
10.2495/MEEE20130301
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin film is one new direct band-gap broadband of semiconducting material with perfect qualitative of piezoelectricity, photoelectricity, air sensitivity, and pressure sensitivity. The room temperature of this energy gap is about 3.37 eV, and exciton binding energy is high to 60 meV. Moreover, it can realize ultraviolet laser emission in normal room temperature, which has wide application in luminous diode, optical detector, electro-fluorescent device, transparent conducting films, and surface acoustic wave. This paper analyzes characteristics of ZnO thin film, researches key technique of RF magnetron sputtering, and ZnO thin film application and precaution in solar cell application.
引用
收藏
页码：211 / 216
页数：6
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